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d_mos7.h

/* $Id: d_mos7.model,v 24.4 2003/04/06 10:36:01 al Exp $ -*- C++ -*-
 * Copyright (C) 2001 Albert Davis
 * Author: Albert Davis <aldavis@ieee.org>
 *
 * This file is part of "Gnucap", the Gnu Circuit Analysis Package
 *
 * This program is free software; you can redistribute it and/or modify
 * it under the terms of the GNU General Public License as published by
 * the Free Software Foundation; either version 2, or (at your option)
 * any later version.
 *
 * This program is distributed in the hope that it will be useful,
 * but WITHOUT ANY WARRANTY; without even the implied warranty of
 * MERCHANTABILITY or FITNESS FOR A PARTICULAR PURPOSE.  See the
 * GNU General Public License for more details.
 *
 * You should have received a copy of the GNU General Public License
 * along with this program; if not, write to the Free Software
 * Foundation, Inc., 59 Temple Place - Suite 330, Boston, MA
 * 02111-1307, USA.
 *------------------------------------------------------------------
 * Berkeley BSIM3v3.1 model
 * Derived from Spice3f4,Copyright 1990 Regents of the University of California
 * Author: 1991 JianHui Huang and Min-Chie Jeng.
 * Recoded for Gnucap model compiler, Al Davis, 2000
 */
/* This file is automatically generated. DO NOT EDIT */
#ifndef D_MOS7_H_INCLUDED
#define D_MOS7_H_INCLUDED

#include "u_sdp.h"
#include "d_mos_base.h"
/*--------------------------------------------------------------------------*/
class SDP_MOS7
  :public SDP_MOS_BASE{
public:
  explicit SDP_MOS7(const COMMON_COMPONENT*);
public:
  double cdsc;    // Drain/Source and channel coupling capacitance Q/V/m^2
  double cdscb;   // Body-bias dependence of cdsc Q/V/m^2
  double cdscd;   // Drain-bias dependence of cdsc Q/V/m^2
  double cit;     // Interface state capacitance Q/V/m^2
  double nfactor; // Subthreshold swing Coefficient
  double xj;      // Junction depth in meters
  double vsat;    // Saturation velocity at tnom m/s
  double at;      // Temperature coefficient of vsat m/s
  double a0;      // Non-uniform depletion width effect coefficient.
  double ags;     // Gate bias  coefficient of Abulk.
  double a1;      // Non-saturation effect coefficient
  double a2;      // Non-saturation effect coefficient
  double keta;    // Body-bias coefficient of non-uniform depletion width effect. 1/v
  double nsub;    // Substrate doping concentration 1/cm3
  double npeak;   // Channel doping concentration 1/cm3
  double ngate;   // Poly-gate doping concentration 1/cm3
  double gamma1;  // Vth body coefficient
  double gamma2;  // Vth body coefficient
  double vbx;     // Vth transition body Voltage
  double vbm;     // Maximum body voltage
  double xt;      // Doping depth
  double k1;      // Bulk effect coefficient 1
  double kt1;     // Temperature coefficient of Vth
  double kt1l;    // Temperature coefficient of Vth
  double kt2;     // Body-coefficient of kt1
  double k2;      // Bulk effect coefficient 2
  double k3;      // Narrow width effect coefficient
  double k3b;     // Body effect coefficient of k3
  double w0;      // Narrow width effect parameter
  double nlx;     // Lateral non-uniform doping effect
  double dvt0;    // Short channel effect coeff. 0
  double dvt1;    // Short channel effect coeff. 1
  double dvt2;    // Short channel effect coeff. 2 1/v
  double dvt0w;   // Narrow Width coeff. 0
  double dvt1w;   // Narrow Width effect coeff. 1
  double dvt2w;   // Narrow Width effect coeff. 2
  double drout;   // DIBL coefficient of output resistance
  double dsub;    // DIBL coefficient in the subthreshold region
  double vth0;    // Threshold voltage
  double ua1;     // Temperature coefficient of ua m/v
  double ua;      // Linear gate dependence of mobility m/v
  double ub1;     // Temperature coefficient of ub (m/V)**2
  double ub;      // Quadratic gate dependence of mobility (m/V)**2
  double uc1;     // Temperature coefficient of uc
  double uc;      // Body-bias dependence of mobility
  double u0;      // Low-field mobility at Tnom
  double ute;     // Temperature coefficient of mobility
  double voff;    // Threshold voltage offset
  double delta;   // Effective Vds parameter
  double rdsw;    // Source-drain resistance per width
  double prwg;    // Gate-bias effect on parasitic resistance
  double prwb;    // Body-effect on parasitic resistance
  double prt;     // Temperature coefficient of parasitic resistance
  double eta0;    // Subthreshold region DIBL coefficient
  double etab;    // Subthreshold region DIBL coefficient 1/v
  double pclm;    // Channel length modulation Coefficient
  double pdibl1;  // Drain-induced barrier lowering coefficient
  double pdibl2;  // Drain-induced barrier lowering coefficient
  double pdiblb;  // Body-effect on drain-induced barrier lowering 1/v
  double pscbe1;  // Substrate current body-effect coefficient
  double pscbe2;  // Substrate current body-effect coefficient
  double pvag;    // Gate dependence of output resistance parameter
  double wr;      // Width dependence of rds
  double dwg;     // Width reduction parameter
  double dwb;     // Width reduction parameter
  double b0;      // Abulk narrow width parameter
  double b1;      // Abulk narrow width parameter
  double alpha0;  // substrate current model parameter
  double beta0;   // substrate current model parameter
  double elm;     // Non-quasi-static Elmore Constant Parameter
  double vfbcv;   // Flat Band Voltage parameter for capmod=0 only
  double cgsl;    // New C-V model parameter
  double cgdl;    // New C-V model parameter
  double ckappa;  // New C-V model parameter
  double cf;      // Fringe capacitance parameter
  double clc;     // Vdsat parameter for C-V model
  double cle;     // Vdsat parameter for C-V model
  double dl;      // 
  double dlc;     // 
  double dw;      // 
  double dwc;     // 
  double leff;    // 
  double weff;    // 
  double leffCV;  // 
  double weffCV;  // 
  double abulkCVfactor; // 
  double cgso;    // 
  double cgdo;    // 
  double cgbo;    // 
  double litl;    // 
};
/*--------------------------------------------------------------------------*/
class TDP_MOS7
  :public TDP_MOS_BASE{
public:
  explicit TDP_MOS7(const DEV_MOS*);
public:
  double temp;    // 
  double tempratio;     // 
  double tempratio_1;   // 
  double vtm;     // vtm
  double ua;      // 
  double ub;      // 
  double uc;      // 
  double u0temp;  // 
  double vsattemp;      // 
  double rds0;    // 
  double phi;     // 
  double sqrtPhi; // 
  double phis3;   // 
  double Xdep0;   // 
  double vbi;     // 
  double cdep0;   // 
  double k1;      // 
  double k2;      // 
  double vbsc;    // 
  double vth0;    // 
  double vfb;     // 
  double theta0vb0;     // 
  double thetaRout;     // 
};
/*--------------------------------------------------------------------------*/
class MODEL_MOS7
  :public MODEL_MOS_BASE{
public:
  // using generated copy constructor, should be unreachable
  explicit MODEL_MOS7();
  ~MODEL_MOS7() {--_count;}
public: // override virtual
  bool      parse_front(CS&);
  bool      parse_params(CS&);
  void      parse_finish();
  SDP_CARD* new_sdp(const COMMON_COMPONENT* c)const;
  void      print_front(OMSTREAM&)const;
  void      print_params(OMSTREAM&)const;
  void      print_calculated(OMSTREAM&)const;
  bool      is_valid(const COMMON_COMPONENT*)const;
  void      tr_eval(COMPONENT*)const;
public: // not virtual
  static int count() {return _count;}
private: // strictly internal
  enum {LEVEL=7};
  static int _count;
public: // input parameters
  SDP cdsc; // Drain/Source and channel coupling capacitance Q/V/m^2
  SDP cdscb;      // Body-bias dependence of cdsc Q/V/m^2
  SDP cdscd;      // Drain-bias dependence of cdsc Q/V/m^2
  SDP cit;  // Interface state capacitance Q/V/m^2
  SDP nfactor;    // Subthreshold swing Coefficient
  SDP xj;   // Junction depth in meters
  SDP vsat; // Saturation velocity at tnom m/s
  SDP at;   // Temperature coefficient of vsat m/s
  SDP a0;   // Non-uniform depletion width effect coefficient.
  SDP ags;  // Gate bias  coefficient of Abulk.
  SDP a1;   // Non-saturation effect coefficient
  SDP a2;   // Non-saturation effect coefficient
  SDP keta; // Body-bias coefficient of non-uniform depletion width effect. 1/v
  SDP nsub; // Substrate doping concentration 1/cm3
  SDP npeak;      // Channel doping concentration 1/cm3
  SDP ngate;      // Poly-gate doping concentration 1/cm3
  SDP gamma1;     // Vth body coefficient
  SDP gamma2;     // Vth body coefficient
  SDP vbx;  // Vth transition body Voltage
  SDP vbm;  // Maximum body voltage
  SDP xt;   // Doping depth
  SDP k1;   // Bulk effect coefficient 1
  SDP kt1;  // Temperature coefficient of Vth
  SDP kt1l; // Temperature coefficient of Vth
  SDP kt2;  // Body-coefficient of kt1
  SDP k2;   // Bulk effect coefficient 2
  SDP k3;   // Narrow width effect coefficient
  SDP k3b;  // Body effect coefficient of k3
  SDP w0;   // Narrow width effect parameter
  SDP nlx;  // Lateral non-uniform doping effect
  SDP dvt0; // Short channel effect coeff. 0
  SDP dvt1; // Short channel effect coeff. 1
  SDP dvt2; // Short channel effect coeff. 2 1/v
  SDP dvt0w;      // Narrow Width coeff. 0
  SDP dvt1w;      // Narrow Width effect coeff. 1
  SDP dvt2w;      // Narrow Width effect coeff. 2
  SDP drout;      // DIBL coefficient of output resistance
  SDP dsub; // DIBL coefficient in the subthreshold region
  SDP vth0; // Threshold voltage
  SDP ua1;  // Temperature coefficient of ua m/v
  SDP ua;   // Linear gate dependence of mobility m/v
  SDP ub1;  // Temperature coefficient of ub (m/V)**2
  SDP ub;   // Quadratic gate dependence of mobility (m/V)**2
  SDP uc1;  // Temperature coefficient of uc
  SDP uc;   // Body-bias dependence of mobility
  SDP u0;   // Low-field mobility at Tnom
  SDP ute;  // Temperature coefficient of mobility
  SDP voff; // Threshold voltage offset
  SDP delta;      // Effective Vds parameter
  SDP rdsw; // Source-drain resistance per width
  SDP prwg; // Gate-bias effect on parasitic resistance
  SDP prwb; // Body-effect on parasitic resistance
  SDP prt;  // Temperature coefficient of parasitic resistance
  SDP eta0; // Subthreshold region DIBL coefficient
  SDP etab; // Subthreshold region DIBL coefficient 1/v
  SDP pclm; // Channel length modulation Coefficient
  SDP pdibl1;     // Drain-induced barrier lowering coefficient
  SDP pdibl2;     // Drain-induced barrier lowering coefficient
  SDP pdiblb;     // Body-effect on drain-induced barrier lowering 1/v
  SDP pscbe1;     // Substrate current body-effect coefficient
  SDP pscbe2;     // Substrate current body-effect coefficient
  SDP pvag; // Gate dependence of output resistance parameter
  SDP wr;   // Width dependence of rds
  SDP dwg;  // Width reduction parameter
  SDP dwb;  // Width reduction parameter
  SDP b0;   // Abulk narrow width parameter
  SDP b1;   // Abulk narrow width parameter
  SDP alpha0;     // substrate current model parameter
  SDP beta0;      // substrate current model parameter
  SDP elm;  // Non-quasi-static Elmore Constant Parameter
  SDP vfbcv;      // Flat Band Voltage parameter for capmod=0 only
  SDP cgsl; // New C-V model parameter
  SDP cgdl; // New C-V model parameter
  SDP ckappa;     // New C-V model parameter
  SDP cf;   // Fringe capacitance parameter
  SDP clc;  // Vdsat parameter for C-V model
  SDP cle;  // Vdsat parameter for C-V model
  int capMod;     // Capacitance model selector (0, 1, 2, other?)
  int nqsMod;     // Non-quasi-static model selector (0, !0)
  int mobMod;     // Mobility model selector (1,2,3,other?)
  int noiMod;     // Noise model selector (not used)
  int paramChk;   // Model parameter checking selector (not used)
  int binUnit;    // Bin unit selector (1, !1)
  double version; // parameter for model version (not used)
  double tox;     // Gate oxide thickness in meters
  double xpart;   // Channel charge partitioning
  double jctSidewallSatCurDensity;  // Sidewall junction reverse saturation current density
  double mjswg;   // Source/drain (gate side) sw junction capacitance grading coefficient
  double pbswg;   // Source/drain (gate side) sw junction capacitance built in potential
  double unitLengthGateSidewallJctCap;    // Source/drain (gate side) sidewall junction capacitance per unit width
  double jctEmissionCoeff;    // Source/drain junction emission coefficient
  double jctTempExponent;     // Junction current temperature exponent
  double Lint;    // Length reduction parameter
  double Ll;      // Length reduction parameter
  double Lln;     // Length reduction parameter
  double Lw;      // Length reduction parameter
  double Lwn;     // Length reduction parameter
  double Lwl;     // Length reduction parameter
  double Wint;    // Width reduction parameter
  double Wl;      // Width reduction parameter
  double Wln;     // Width reduction parameter
  double Ww;      // Width reduction parameter
  double Wwn;     // Width reduction parameter
  double Wwl;     // Width reduction parameter
  double dwc;     // Delta W for C-V model
  double dlc;     // Delta L for C-V model
  double noia;    // Flicker noise parameter, oxide trap density A
  double noib;    // Flicker noise parameter, oxide trap density B
  double noic;    // Flicker noise parameter, oxide trap density C
  double em;      // Flicker noise parameter V/m
  double ef;      // Flicker noise frequency exponent
public: // calculated parameters
  double cox;     // 
  double factor1; // 
  double vt_at_tnom;    // 
  double ni;      // 
};
/*--------------------------------------------------------------------------*/
/*--------------------------------------------------------------------------*/
/*--------------------------------------------------------------------------*/
#endif

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